电子器件2017，Vol.40Issue(2)：291-295,5.DOI:10.3969/j.issn.1005-9490.2017.02.006
基于IGBT模块饱和压降温度特性的结温探测研究
Junction Temperature Detection Research of IGBT Module Based onTemperature Characteristic of Saturation Voltage Drop
摘要
Abstract
The junction temperature detection of IGBT is the key to the transient thermal impedance test under laboratory condition.First,to prove the saturation voltage drop temperature characteristic is only related to the chip under the thermal steady state and the thermal transient state respectively.Then to establish the junction temperature detection model of IGBT only uses the saturation voltage drop values and the collector current values to detect junction temperature values.Compared the calculated junction temperature with measured junction temperature using optical fiber,two kinds of temperature coincide very well,it is proved that the calculated method can accurately detect the junction temperature.The calculated method can be used in measuring transient thermal impedance in the heating process of constant current.Compared with the thermal parameter method measuring in the cooling process the method has more significance in practice.关键词
IGBT/结温探测/温度特性/饱和压降Key words
IGBT/junction temperature detection/temperature characteristic/saturation voltage drop分类
信息技术与安全科学引用本文复制引用
姚芳,王少杰,李志刚..基于IGBT模块饱和压降温度特性的结温探测研究[J].电子器件,2017,40(2):291-295,5.基金项目
国家科技支撑计划项目(2015BAA09B01) （2015BAA09B01）
国家自然科学基金项目(51377044) （51377044）
河北省科技计划项目(13214303D,14214503D) （13214303D,14214503D）
