电子元件与材料2017，Vol.36Issue(4)：52-55,4.DOI:10.14106/j.cnki.1001-2028.2017.04.010
杂质对二硫化钼场效应晶体管磁滞效应的影响
Effect of impurities on hysteresis of MoS2 field-effect transistors
摘要
Abstract
Molybdenum disulfide (MoS2) has promising characteristics as semiconductor devices,but the large hysteresis observed in transfer characteristic curves limites its application in field effect transistors (FETs).The electrical characteristic curves of supported and suspended devices with MoS2 films prepared by chemical vapor deposition method were measured at room temperature (20 ℃).The hysteresis appeares both in supported device and suspended device,but the hysteresis in supported device is more obvious than that of suspended device.The results suggest that,the adsorption of oxygen and water molecular on the surface of MoS2 plays a crucial role in leading to the hysteresis,since the adsorbed molecular can capture charge carriers from the conduction band of the MoS2 channel.关键词
MoS2/场效应晶体管/悬置/非悬置/磁滞/电学特性曲线Key words
MoS2/field-effect transistor/suspended/supported/hysteresis/electrical characteristic curve分类
信息技术与安全科学引用本文复制引用
方佳佳,杨启志,王权..杂质对二硫化钼场效应晶体管磁滞效应的影响[J].电子元件与材料,2017,36(4):52-55,4.基金项目
国家自然科学基金资助项目(No.51675246) （No.51675246）
镇江市工业支撑项目(No.GY2016014) （No.GY2016014）
