现代电子技术2017，Vol.40Issue(8)：4-7,4.DOI:10.16652/j.issn.1004-373x.2017.08.002
基于电热耦合效应下的TSV互连结构传输性能分析
Analysis of TSV interconnection structure transmission performance based on electro-thermal coupling effect
摘要
Abstract
In combination with the fundamental of the circuit and heat circuit,and geometry structure of the TSV(through silicon via),the equivalent circuit model of the TSV interconnection structure was established. The interconnection transmission performance of the model under the electrothermal coupling condition is analyzed. The influence of the radius,height and sili-con dioxide layer′s thickness of the TSV on the TSV transmission performance is studied. The study results show that the trans-mission performance of the TSV interconnection structure becomes high with the increase of the radius and silicon dioxide layer′s thickness of the TSV,and becomes poor with the increase of the height of the TSV. The S-parameter analyzed with the COMSOL simulation software is compared with the result obtained with the equivalent circuit model. The two results are almost the same, which prove that the equivalent circuit model is correct.关键词
TSV/电热耦合/等效电路/COMSOL/S参数Key words
TSV/electrothermal coupling/equivalent circuit/COMSOL/S-parameter分类
信息技术与安全科学引用本文复制引用
李春泉,谢星华,尚玉玲,黄红艳,邹梦强..基于电热耦合效应下的TSV互连结构传输性能分析[J].现代电子技术,2017,40(8):4-7,4.基金项目
国家自然科学基金(51465013) （51465013）
桂林电子科技大学研究生创新项目(GDYCSZ201443 （）
GDYCSZ201480) （）
广西自动检测技术与仪器重点实验室主任基金(YQ15109) （YQ15109）
广西研究生教育创新计划资助项目(YCSZ2014142) （YCSZ2014142）
