现代应用物理2017，Vol.8Issue(1)：48-55,8.DOI:10.12061/j.issn.2095-6223.2017.010601
体硅90 nm SRAM重离子单粒子多位翻转实验和数值模拟
Heavy Ion Testing and Numerical Modeling of Single EventMultiple-Cell Upsets on 90 nm Bulk CMOS SRAM
罗尹虹 1张凤祁 2郭红霞 3陈伟 3丁李利3
作者信息
- 1. 西北核技术研究所,西安710024
- 2. 强脉冲辐射环境模拟与效应国家重点实验室,西安710024
- 折叠
摘要
Abstract
Heavy ion testing investigation of single event multiple-cell upsets(MCU) on 90 nm bulk CMOS SRAM is carried out after building the MCUs testing method and data processing technique.The dependence of the parameters,such as MCU percentage, mean value and size,on heavy ion linear energy transfer(LET)value is summarized and analyzed.The result reveals the severity of MCU at the nanoscale.The influences of MCU on present heavy ion single event effect test method and prediction method are pointed out.A full three-dimensional device model with multiple bitcells is constructured.The influence mechanism of different position of well contact on MCU charge collection is studied by numerical modeling.The triggering mechanism of the bipolar amplification of multiple cells due to well potential perturbation is the main factor of the occurence of MCU.It is an effective methed to reduce the distance between well contact and bitwell in decreasing the probability of MCU.关键词
90nmSRAM/单粒子多位翻转/阱电势扰动/寄生双极放大Key words
90 nm SRAM/multiple-cell upsets/well potential perturbation/parasitic bipolar amplification分类
信息技术与安全科学引用本文复制引用
罗尹虹,张凤祁,郭红霞,陈伟,丁李利..体硅90 nm SRAM重离子单粒子多位翻转实验和数值模拟[J].现代应用物理,2017,8(1):48-55,8.
