现代应用物理2017，Vol.8Issue(1)：56-60,5.DOI:10.12061/j.issn.2095-6223.2017.010602
重离子注入GaAs辐照损伤研究
Irradiation Damage of GaAs Induced by Kr Ion
杨迪 1彭金鑫 1孙梦利 1彭海波 1王铁山 1郭红霞2
作者信息
- 1. 兰州大学 核科学与技术学院,兰州730000
- 2. 西北核技术研究所,西安710024
- 折叠
摘要
Abstract
Semi-insulting and Silicon-doping(N-type) GaAs(100) and Zinc-doping(P-type) GaAs(110 and 100) were irradiated by 4.5 MeV Kr17+ ions with fluences ranging from 1×10.12 to 3×10.14 cm-2.As the ion fluence increases, the longitudinal-optical (LO) phonon peak moves to the low-frequency, and there is an obvious asymmetric broadening.The crystalline structure damage of N-type sample after irradiation is more serious than those of P-type and the semi-insulting samples.The frequency shift of LO phonon peak in three types of samples is consistent with the irradiation damage, which shows that doping elements will not affect the crystalline structure of the material itself.It may be proved that the mixed crystal growth mode results in unstability of N-type GaAs after irradiation.关键词
GaAs/拉曼光谱/辐照效应/晶体结构Key words
GaAs/Raman scattering spectra/irradiation effect/crystalline structure分类
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杨迪,彭金鑫,孙梦利,彭海波,王铁山,郭红霞..重离子注入GaAs辐照损伤研究[J].现代应用物理,2017,8(1):56-60,5.
