太赫兹科学与电子信息学报2017，Vol.15Issue(1)：15-20,6.DOI:10.11805/TKYDA201701.0015
太赫兹探测器读出电路的单电子晶体管制备
Fabrication of single electron transistors as the readout circuits for terahertz detectors
摘要
Abstract
Radio-Frequency Single-Electron-Transistor(RF-SET) allows for readout of sub-electroncharge with high speed.Hence,a RF-SET could be used as a readout circuit for superconducting terahertz single-photon detector which converts photons into charges.SETs could be fabricated on Silicon on Insulator(SOI) with good controllability and reproducibility.However,the current yield of SETs on SOI (about 30％) is not yet sufficient for realizing a detector array.In order to improve the yield,single-line exposure mode of Electron-Beam Lithography(EBL) is used to precisely define the width of tunneling barriers;and the etching gas in Inductively-Coupled Plasma(ICP) etching is optimized to realize good pattern transfer;oxidation of silicon is performed at a lower temperature to maintain the precision in the definition of SETs.Since the tunneling barriers are precisely controlled,the yield of SETs has been increased to 90％.Such a high yield makes it more practical to implement SETs as readout circuits in detector arrays.关键词
零宽度线曝光/单电子晶体管/近邻效应/太赫兹单光子探测器/隧穿势垒Key words
Single-line exposure/Single Electron Transistor/proximity-effect/THz single photon detector/tunneling barrier分类
信息技术与安全科学引用本文复制引用
刘永涛,李欣幸,张志鹏,方靖岳,秦华,俞圣雯..太赫兹探测器读出电路的单电子晶体管制备[J].太赫兹科学与电子信息学报,2017,15(1):15-20,6.基金项目
国家自然科学基金资助项目(11403084 （）
61401456 （）
61271157) （）
中国科学院科研装备研制资助项目(YZ201152) （YZ201152）
湖南省自然科学基金资助项目(2016JJ3021) （2016JJ3021）
