太赫兹科学与电子信息学报2017，Vol.15Issue(1)：125-128,133,5.DOI:10.11805/TKYDA201701.0125
抗辐射加固CMOS基准设计
Design of a total-dose radiation hardened CMOS reference
摘要
Abstract
The I-U characteristic curves of Dynamic Threshold MOS(DTMOS) transistor are obtained based on 0.5 μm Complementary Metal Oxide Semiconductor(CMOS) process.Compared with the PNP transistor of conventional CMOS technology,the design criteria are given,which are used to design the radiation-hardened CMOS reference.The radiation-hardened CMOS reference is completed by using DTMOS diodes as radiation tolerance diodes and combining the Radiation Hardening By Design(RHBD) technology.The experimental results show that the ability of anti-γ ionizing radiation total dose reaches up to 300 krad(Si) for the radiation-hardened CMOS reference.关键词
辐射加固/设计加固/带隙基准/动态阈值MOS管Key words
radiation hardened/Radiation Hardening By Design/bandgap reference/Dynamic Threshold MOS分类
信息技术与安全科学引用本文复制引用
刘智,杨力宏,姚和平,梁希..抗辐射加固CMOS基准设计[J].太赫兹科学与电子信息学报,2017,15(1):125-128,133,5.基金项目
装备预先研究基金资助项目(51311050206) （51311050206）
