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纳米器件质子在轨单粒子翻转率预计方法

于庆奎 罗磊 唐民 孙毅 魏志超 李铮

太赫兹科学与电子信息学报2017,Vol.15Issue(1):145-147,158,4.
太赫兹科学与电子信息学报2017,Vol.15Issue(1):145-147,158,4.DOI:10.11805/TKYDA201701.0145

纳米器件质子在轨单粒子翻转率预计方法

SEU rate calculation for nano device proton on orbit based on protons and heavy ions experimental data

于庆奎 1罗磊 1唐民 1孙毅 1魏志超 1李铮1

作者信息

  • 1. 中国空间技术研究院宇航物资保障事业部,北京100029
  • 折叠

摘要

Abstract

The methods of Single-Event Upset(SEU) rates calculation induced by protons on orbits are studied on nano device.The SEUs of 65 nm SRAM are tested by using heavy ions and protons generated by accelerator.The SEU rates induced by protons on orbit are calculated based on heavy ion and proton experimental data respectively.It is shown that the proton SEU rate obtained by heavy ion experimental data is 1.5 order of magnitude lower than that obtained by proton experimental data.The conclusion is that proton SEU test should be performed for nano device to evaluate its SEU sensitivity;and the proton SEU rate should be calculated based on the proton experimental data.

关键词

辐射效应/纳米器件/质子/重离子/单粒子翻转

Key words

radiation effect/nano device/proton/heavy ion/Single-Event Upset(SEU)

分类

信息技术与安全科学

引用本文复制引用

于庆奎,罗磊,唐民,孙毅,魏志超,李铮..纳米器件质子在轨单粒子翻转率预计方法[J].太赫兹科学与电子信息学报,2017,15(1):145-147,158,4.

基金项目

国家自然科学基金资助项目(11475256)) (11475256)

太赫兹科学与电子信息学报

OA北大核心CSTPCD

2095-4980

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