太赫兹科学与电子信息学报2017，Vol.15Issue(1)：148-152,5.DOI:10.11805/TKYDA201701.0148
集成电路总剂量加固技术的研究进展
Research progress on the technology of total dose radiation hardened
印琴 1蔡洁明 1刘士全 1徐睿1
作者信息
- 1. 中国电子科技集团公司第58研究所,江苏无锡214035
- 折叠
摘要
Abstract
The research process of the technology of total dose radiation hardening is analyzed.Integrated circuit technology innovation in materials,device structure,layout design and system structure,promotes the development of the total dose reinforcement technology.The new technology increases the capability of total dose reinforcement and extends the life of the electronic systems in the radiation environment.The recently proposed new total dose radiation hardening technologies,such as using new material like Ag-Ge-S,Single-Wall Carbon Nanotube(SWCNT) etc.,adopting Drain/Source On Insulator (DSOI) device structure,OCTOgonal-gate(OCTO) layout,Alternate Biasing Triple Modular Redundancy (ABTMR) system structure,are summarized.These technologies increase the resistance capability to total dose radiation of devices and electronic systems significantly.The research results will help to establish a complete total dose reinforcement system to enhance the anti-radiation index,and can provide reference for promoting the rapid development of total dose radiation hardening technology.关键词
抗辐射加固/总剂量/研究进展Key words
radiation hardening/total dose/research progress分类
信息技术与安全科学引用本文复制引用
印琴,蔡洁明,刘士全,徐睿..集成电路总剂量加固技术的研究进展[J].太赫兹科学与电子信息学报,2017,15(1):148-152,5.
