太赫兹科学与电子信息学报2017，Vol.15Issue(1)：153-158,6.DOI:10.11805/TKYDA201701.0153
后端互联工艺对集成电路单粒子翻转效应的影响
Impact of backend interconnection process on the Single-Event-Effects in integrated circuits
毕津顺 1贾少旭 1韩郑生 1罗家俊1
作者信息
- 1. 中国科学院微电子研究所,北京100029
- 折叠
摘要
Abstract
The Monte Carlo simulations of high energy particles injection are conducted based on Geant4 tools.Simulation theory is introduced.The impacts of backend interconnection process on SingleEvent-Effects(SEE) in integrated circuits are analyzed in terms of total reaction cross-section and deposited charge.It demonstrates that tungsten enhances the SEE in semiconductor devices.When high energy particles strike,the nuclear reaction effects are similar between Al and Cu.The deposited charge corresponding to the cross point is 0.66 pC.Beyond the cross point,the total reaction cross-section of Al is larger than that of Cu.Below the cross point,the trend is reversed.The block layer of ohmic contact such as Ti and TiN mitigates the SEE slightly.关键词
蒙特卡洛/后端互联/单粒子效应/集成电路Key words
Monte Carlo/backend interconnection/Single-Event-Effects/integrated circuits分类
信息技术与安全科学引用本文复制引用
毕津顺,贾少旭,韩郑生,罗家俊..后端互联工艺对集成电路单粒子翻转效应的影响[J].太赫兹科学与电子信息学报,2017,15(1):153-158,6.
