中国电机工程学报2017，Vol.37Issue(7)：2068-2080,13.DOI:10.13334/j.0258-8013.pcsee.160258
基于耦合电感的SiC MOSFET并联主动均流
Active Current Sharing of Paralleled SiC MOSFETs by Coupling Inductors
摘要
Abstract
Parallel connection of SiC MOSFET devices is an available solution for high power level applications, which will be commonly used in power control units of electric vehicles, etc. However, due to the parameter variations of SiC MOSFETs, the unbalanced stray parameters of layouts or packages, and the different junction temperature of devices, the current sharing among paralleled SiC MOSFETs is hardly realized. In this paper, a coupling inductor, with multiple coils in series with SiC MOSFETs, was applied to actively balance the current of different SiC MOSFET branches. Based on the built mathematical model, the static and dynamic current dispatching of paralleled SiC MOSFETs were analyzed in detail, considering the unbalanced static parameters of devices, stray inductors, and junction temperatures. Then, the circuit and mathematical models of coupling inductors were presented to reveal its mechanism to actively eliminate the unbalance current. Finally, experimental results were given to verify the validity and effectiveness of proposed models and approaches, and the unbalanced current of paralleled currents can be decreased from 15% to 2% by using the coupling inductor.关键词
SiCMOSFET/并联/电流均衡/耦合电感Key words
SiC MOSFET/parallel connection/current sharing/coupling inductor分类
信息技术与安全科学引用本文复制引用
曾正,邵伟华,胡博容,康升扬,廖兴林,李辉,冉立..基于耦合电感的SiC MOSFET并联主动均流[J].中国电机工程学报,2017,37(7):2068-2080,13.基金项目
国家自然科学基金项目(51607016),输配电装备及系统安全与新技术国家重点实验室自主研究项目(2007DA10512716301). Project Supported by National Natural Science Foundation of China (51607016), Scientific Research foundation of State Key Laboratory of Power Transmission Equipment & System Security and New Technology (2007DA10512716301). （51607016）
