中国空间科学技术2017，Vol.37Issue(2)：48-53,6.DOI:10.16708/j.cnki.1000-758X.2017.0032
MPCVD法合成硼掺杂金刚石薄膜的次级发射性能
Secondary electron emission properties from boron doped diamond films
摘要
Abstract
The cathode materials used in electron multiplier, field emission cathode and particle/ photon detector have the problem of low secondary electron emission yield and unstable emission. To solve this problem,different boron concentration diamond films by microwave plasma chemical vapor deposition were prepared.The surface of B-doped diamond film was treated by Hydrogen plasma.The secondary electron emission (SEE)from B-doped diamond films was investigated.The scanning electron microscopy (SEM) and the Raman spectrum analysis were used to examine the properties of the B-doped diamond film.The maximum SEE yield up to 18.3 at 1 keV primary beam energy was found under the condition that the samples were left in air for weeks and subject to no treatment prior to the measurement.Oxidation treatment destroys negative electron affinity (NEA)whereas heating up in vacuum substantially brings back NEA.B-doped diamond film is expected to be used in electron multiplier,field emission cathode and particle/photon detector.关键词
硼掺杂金刚石/微波等离子体化学气相沉积(MPCVD)/次级电子发射能力/负电子亲和势(NEA)/电子倍增器Key words
B-doped diamond films/microwave plasma chemical vapor deposition/secondary electron emission (SEE)yield/negative electron affinity (NEA)/electron multiplier分类
通用工业技术引用本文复制引用
李莉莉,丁明清,高玉娟,邵文生,冯进军..MPCVD法合成硼掺杂金刚石薄膜的次级发射性能[J].中国空间科学技术,2017,37(2):48-53,6.基金项目
微波电真空器件国家级重点实验室基金 (9140C0505011006) （9140C0505011006）
