郑州大学学报（理学版）2017，Vol.49Issue(2)：101-105,5.DOI:10.13705/j.issn.1671-6841.2016197
基于硅纳米孔柱阵列氮化镓纳米结构的光致发光特性
Photoluminescence Properties of Gallium Nitride NanostructuresBased on Silicon Nanoporous Pillar Array
摘要
Abstract
Utilizing silicon nanoporous pillar array (Si-NPA) as substrates, a series of GaN/Si-NPA samples were prepared at different temperatures and ammonia flux by a chemical vapor deposition method.The characterization on the surface morphologies and microstructures disclosed that both the morphology and the featured size of the GaN nanostructures would change with the preparing conditions.The measurement on the photoluminescence (PL) of GaN/Si-NPA illustrated that although all the samples exhibited a PL spectrum composed of an ultraviolet PL band, a yellow PL band and a red PL band.The PL peak intensity, peak position and its full width at half maximum changed largely with the preparing temperature.The analyses on the PL process and mechanism combined with the preparing procedure and the structural characteristics of GaN/Si-NPA demonstrated that an effective control on the PL properties could be realized through changing the preparing conditions.关键词
硅纳米孔柱阵列/氮化镓/光致发光/能带结构Key words
silicon nanoporous pillar array/GaN/photoluminescence/energy band diagram分类
数理科学引用本文复制引用
刘伟康,杜蕊,朱文亮,冯明海,李新建..基于硅纳米孔柱阵列氮化镓纳米结构的光致发光特性[J].郑州大学学报（理学版）,2017,49(2):101-105,5.基金项目
国家自然科学基金项目(61176044). （61176044）
