半导体学报（英文版）2017，Vol.38Issue(5)：4-10,7.DOI:10.1088/1674-4926/38/5/053001
Analysis of morphological, structural and electrical properties of annealed TiO2 nanowires deposited by GLAD technique
Analysis of morphological, structural and electrical properties of annealed TiO2 nanowires deposited by GLAD technique
B.Shougaijam 1R.Swain 2C.Ngangbam 3T.R.Lenka1
作者信息
- 1. Microelectronics & VLSI Design Group, Department of ECE, National Institute of Technology Silchar, Assam, 788010, India
- 2. Department of Electronics Engineering, Parala Maharaja Engineering College, Berhampur, 761003, Odisha, India
- 3. Department of ECE, National Institute of Technology Manipur, 795004, India
- 折叠
摘要
关键词
annealing/GLAD/morphology/nanowires/structural/TiO2Key words
annealing/GLAD/morphology/nanowires/structural/TiO2引用本文复制引用
B.Shougaijam,R.Swain,C.Ngangbam,T.R.Lenka..Analysis of morphological, structural and electrical properties of annealed TiO2 nanowires deposited by GLAD technique[J].半导体学报（英文版）,2017,38(5):4-10,7.
