首页|期刊导航|半导体学报（英文版）|Strain effect on intersubband transitions in rolled-up quantum well infrared photodetectors

Strain effect on intersubband transitions in rolled-up quantum well infrared photodetectors

Han Wang Shilong Li Honglou Zhen Xiaofei Nie Gaoshan Huang Yongfeng Mei Wei Lu

半导体学报（英文版）2017，Vol.38Issue(5)：73-77,5.

半导体学报（英文版）2017，Vol.38Issue(5)：73-77,5.DOI:10.1088/1674-4926/38/5/054006

Strain effect on intersubband transitions in rolled-up quantum well infrared photodetectors

Han Wang ¹Shilong Li ²Honglou Zhen ²Xiaofei Nie ²Gaoshan Huang ¹Yongfeng Mei ³Wei Lu³

作者信息

1. University of Chinese Academy of Sciences, Beijing 100049, China
2. National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China
3. Department of Materials Science, Fudan University, Shanghai 200433, China
折叠

摘要

关键词

quantum well infrared photodetector/rolled-up microtube/strain/Stark effect

Key words

quantum well infrared photodetector/rolled-up microtube/strain/Stark effect

引用本文复制引用

Han Wang,Shilong Li,Honglou Zhen,Xiaofei Nie,Gaoshan Huang,Yongfeng Mei,Wei Lu..Strain effect on intersubband transitions in rolled-up quantum well infrared photodetectors[J].半导体学报（英文版）,2017,38(5):73-77,5.

基金项目

Project supported by the Natural Science Foundation of China (Nos.51322201,61575213),and the Shanghai Municipal Science and Technology Commission (No.14JC1400200). （Nos.51322201,61575213）

半导体学报（英文版）

OACSCDCSTPCD

ISSN：1674-4926

访问量0

下载量0

段落导航