人工晶体学报2017，Vol.46Issue(4)：651-656,661,7.
O2/(O2+Ar)流量比对ZnO-0.25mol% V2O5薄膜缺陷类型的影响
Effect of O2/(O2+Ar) Ratios on the Type of Defects in ZnO-0.25mol% V2O5 Thin Films
摘要
Abstract
ZnO-0.25mol% Vanadium (ZnO∶V) thin films were deposited on glass substrate by RF magnetron sputtering.The type of defects in ZnO∶V thin films under different O2/(O2+Ar) ratios (0%-87.5%) was investigated.The deposited ZnO∶V thin films have wurtzite structure and show c-axis preferred orientation.V4+ and V5+ ions coexist in the films.The defect in ZnO∶V thin films is the complex of VO and Zni.And the ratio of VO to Zni changed with the O2/(O2+Ar) ratio.关键词
ZnO∶V薄膜/射频磁控溅射/掺氧量/缺陷态Key words
ZnO∶V thin film/RF magnetron sputtering/oxygen content/defect state分类
信息技术与安全科学引用本文复制引用
张俊峰,吴隽,龙晓阳,祝柏林,李涛涛,姚亚刚..O2/(O2+Ar)流量比对ZnO-0.25mol% V2O5薄膜缺陷类型的影响[J].人工晶体学报,2017,46(4):651-656,661,7.基金项目
中国科学院苏州纳米技术与纳米仿生研究所纳米器件与应用重点实验室开放课题(15QT02) （15QT02）
