红外与毫米波学报2017，Vol.36Issue(2)：129-134,6.DOI:10.11972/j.issn.1001-9014.2017.02.001
基于量子阱带间跃迁的红外探测器原型器件
A prototype photon detector based on interband transition of quantum wells
摘要
Abstract
Recently,a high localized carrier extraction efficiency and increasing of absorption coefficient was observed in low-dimensional semiconductors within a PN junction.Such phenomenon provides the possibility of fabricating novel high performance quantum well interband transition detector.In this work,we report the performance of the first photon detector based on the interband transition of strained InGaAs/GaAs quantum wells.The external quantum efficiency of the device was measured to be 31％ using an absorption layer with only 100nm effective thickness and without an anti-reflection layer.Using such high value of quantum efficiency,an absorption coefficient of 3.7 × 104 cm-1 is calculated,which is obviously larger than previously reported values.The results here demonstrate the possibility of fabricating high performance and low cost infrared photon detectors.关键词
铟镓砷/砷化镓/带间跃迁/光子探测器Key words
InGaAs/GaAs/interband transition/photon detector分类
信息技术与安全科学引用本文复制引用
刘洁,王禄,江洋,马紫光,王文奇,孙令,贾海强,王文新,陈弘..基于量子阱带间跃迁的红外探测器原型器件[J].红外与毫米波学报,2017,36(2):129-134,6.基金项目
Supported by the National Natural Science Foundation of China (11574362,61210014,11374340,and 11474205),Innovative Clean-Energy Research and Application Program of Beijing Municipal Science and Technology Commission (Z151100003515001) （11574362,61210014,11374340,and 11474205）
