红外与毫米波学报2017，Vol.36Issue(2)：135-138,4.DOI:10.11972/j.issn.1001-9014.2017.02.002
GaSb衬底上分子束外延生长的低温GaSb薄膜的低缺陷表面
Low-defect surfaces of low-temperature GaSb thin films on GaSb substrates
摘要
Abstract
The influence on the low-defect surface of GaSb thin-film material by the ratio of Sb to Ga (Ⅴ/Ⅲ) along with the reducing of the growth temperature was investigated systematically.In order to obtain a good surface morphology of the GaSb epitaxial layer with low defect,both of the growth temperature and the Ⅴ/Ⅲ ratio should be reduced at the same time.The optimal growth conditions of Low-temperature GaSb thin films are that the growth temperature is Tc +60℃ and the Ⅴ/Ⅲ ratio is about 7.1 when Sb cracker temperature is 900℃.关键词
低缺陷/锑化镓/原子力显微镜/Ⅴ/Ⅲ比Key words
low-defect/GaSb/AFM/Ⅴ/Ⅲ分类
信息技术与安全科学引用本文复制引用
郝瑞亭,任洋,刘思佳,郭杰,王国伟,徐应强,牛智川..GaSb衬底上分子束外延生长的低温GaSb薄膜的低缺陷表面[J].红外与毫米波学报,2017,36(2):135-138,4.基金项目
Supported by National Natural Science Foundation of China (11474248,61176127,61006085,61274013,61306013),Key Program for International S&T cooperation Projects of China (2011DFA62380),and Ph.D.Programs Foundation of Ministry of Education of China (20105303120002) （11474248,61176127,61006085,61274013,61306013）
