红外与毫米波学报2017，Vol.36Issue(2)：139-143,5.DOI:10.11972/j.issn.1001-9014.2017.02.003
简易化学水浴法制备SnO2/p-Si异质结光电性能
Optoelectronic properties of SnO2/p-Si heterojunction prepared by a simple chemical bath deposition method
摘要
Abstract
The SnO2 film was successfully deposited on Si wafer by a simple chemical bath method to fabricate nSnO2/p-Si heterojunction structure photoelectric device.The self-made chemical bath system is very cheap and convenient.The structural,optical and electrical properies of the SnO2 film were studied by XRD,SEM,XPS,PL,UV-VIS spectrophotometer and Hall effect measurement.The current-voltage (Ⅰ-Ⅴ) curve of SnO2/p-Si heterojunction device was tested and analyzed in detail.SnO2/p-Si heterojunction shows a prominent visible-lightdriven photoelectrical performance under the low intensity light irradiation.Great photoelectric behavior was also obtained.关键词
SnO2薄膜/化学水浴法/异质结/Ⅰ-Ⅴ曲线Key words
SnO2 film/chemical bath method/heterojunction/current-voltage (Ⅰ-Ⅴ) characteristics分类
数理科学引用本文复制引用
何波,徐静,宁欢颇,赵磊,邢怀中,张建成,秦玉明,张磊..简易化学水浴法制备SnO2/p-Si异质结光电性能[J].红外与毫米波学报,2017,36(2):139-143,5.基金项目
Supported by the Fund of Shanghai Alliance Project(LM201601),the Fund of the Key Laboratory for Ultrafine Materials of The Ministry of Education (15Q10932),the Fundamental Research Funds for the Central Universities,China (16D110916),National Natural Science Foundation of China (11672077) （LM201601）
