红外与毫米波学报2017，Vol.36Issue(2)：167-172,6.DOI:10.11972/j.issn.1001-9014.2017.02.008
面向100GHz+数模混合电路的0.5μm InP DHBT工艺
0.5 μm InP DHBT technology for 100 GHz+ mixed signal integrated circuits
摘要
Abstract
A high performance 3-inch 0.5 μm InP double heterojunction bipolar transistor (DHBT) technology with three interconnect layers has been developed.The epitaxial layer structure and geometry parameters of the device were carefully studied to get the needed performance.The 0.5 μm × 5μm InP DHBTs demonstrated ft =350 GHz,fmax =532 GHz and BVCEO =4.8 V,which were modeled using Agilent-HBT large signal model.Static and dynamic frequency dividers designed and fabricated with this technology have demonstrated maximum clock frequencies of 114 GHz and 170 GHz,respectively.The ultra high speed O.5 μm InP DHBT technology offers a combination of ultra high speed and high breakdown voltage,which makes it an ideal candidate for next generation 100 GHz + mixed signal integrated circuits.关键词
磷化铟/异质结双极型晶体管/分频器Key words
InP/heterojunction bipolar transistor/frequency divider分类
信息技术与安全科学引用本文复制引用
程伟,张有涛,王元,牛斌,陆海燕,常龙,谢俊领..面向100GHz+数模混合电路的0.5μm InP DHBT工艺[J].红外与毫米波学报,2017,36(2):167-172,6.基金项目
Supported by the Natural Science Foundation of Jiangsu Province of China (BK20131072) （BK20131072）
