红外与毫米波学报2017，Vol.36Issue(2)：186-190,5.DOI:10.11972/j.issn.1001-9014.2017.02.010
替代衬底上的碲镉汞长波器件暗电流机理
Dark current mechanism in long-wavelength HgCdTe infrared detectors on alternative substrates
摘要
Abstract
The dark current characteristics of long-wavelength HgCdTe were analyzed for three types of devices.By Ⅰ-Ⅴ measurement under different temperatures,the dominant dark currents of each device were clarified at different temperatures.It is demonstrated that the dark current of B +-implanted n +-onp planar junction on silicon substrate is comparable with that on bulk cadmium zinc telluride (CdZnTe) substrate above 80 K.However,the trap-assisted tunneling current becomes dominant below 80 K due to the high density of dislocations.Compared with n +-on-p junctions,the p +-on-n double-layer heterojunction inhibits the diffusion current effectively,which is good matched with the calculation result with the parameters,derived from Ⅰ-Ⅴ curve fitting.This p +-on-n diode has a R0A value of 38 Ω · cm2 at 80 K,for the cut-off wavelength of 9.6 μm,while that of the n +-on-p diode on bulk CdZnTe is 2.5 Ω · cm2.Below 60 K,the dislocations make the R0A value of the p +-on-n diode an order of magnitude lower than that of the n +-on-p diode on CdZnTe.关键词
碲镉汞/红外焦平面/长波/替代衬底/暗电流Key words
HgCdTe/infrared focal plane arrays/long wavelength/alternative substrate/dark current分类
数理科学引用本文复制引用
赵真典,何力,陈路,傅祥良,王伟强,沈川,张彬,卜顺栋,王高,杨凤..替代衬底上的碲镉汞长波器件暗电流机理[J].红外与毫米波学报,2017,36(2):186-190,5.基金项目
国家自然科学基金(61306062)Supported by National Natural Science Foundation of China (61306062) （61306062）
