化学工程2017，Vol.45Issue(4)：18-24,7.DOI:10.3969/j.issn.1005-9954.2017.04.005
窄带隙半导体耦合Bi2S3/g-C3N4催化剂制备及光催化性能
Preparation of Bi2S3/g-C3N4 photocatalysts by coupling with narrow-band-gap semiconductor and the photocatalytic activities
摘要
Abstract
The Bi2S3/g-C3N4 composite photocatalysts with different Bi2S3 contents were prepared by in-situ synthesis method.The phase,morphology,structure and optical property of as-obtained photocatalysts were studied by X-ray diffraction (XRD),transmissionelectron microscopy (TEM),photoluminescence (PL) spectroscopy measurements and time-resolved fluorescence decay spectra.Rhodamine B (RhB) was selected as pollutant models to evaluate the visible-light photocatalytic activity of Bi2 S3/g-C3 N4 composite photocatalysts.As a result,the visible-light photocatalytic activity of g-C3N4 was greatly improved by decorating the Bi2S3 on surface.Besides,the photocatalytic activity of Bi2S3/g-C3N4 composite photocatalysts was obviously influenced with the adding amount of Bi2S3,and the optimal amount of Bi2S3 was determined to be 5％.The roles of reactive species during photocatalysis were verified by a series of combined techniques,including the active species trapping experiments and NBT transformation over Bi2S3/g-C3N4 composites.The results suggested that h + played the major role and · O2-was the secondary active species.Furthermore,the mechanism for photocatalytic activity enhancement of Bi2S3/g-C3N4 composite photocatalysts was also revealed.It may be ascribed to the increasing visible-light absorption and the formation of heterostructures at the Bi2S3/g-C3N4 interface,which can facilitate the separation of photogenerated electrons and holes and extend the carrier lifetime.关键词
Bi2S3/g-C3N4/复合/光催化/可见光Key words
Bi2S3/g-C3N4/composites/photocatalytic/visible-light分类
化学化工引用本文复制引用
张风丽,段芳,陈明清..窄带隙半导体耦合Bi2S3/g-C3N4催化剂制备及光催化性能[J].化学工程,2017,45(4):18-24,7.基金项目
国家自然科学基金资助项目(51302108) （51302108）
江苏省自然科学基金资助项目(BK20130151) （BK20130151）
