液晶与显示2017，Vol.32Issue(5)：344-351,8.DOI:10.3788/YJYXS20173205.0344
绝缘层材料及结构对薄膜晶体管性能的影响
Effect of insulating layer material and structure on performance of thin film transistors
摘要
Abstract
The paper focuses on analyzing the performance of thin film transistors with different insulation material and different insulation layer structures, based on semiconductor simulation software Silvaco TCAD and combined with experimental validation.The research model is based on the bottom grid structure, and the semiconductor layer is made of amorphous IGZO material.The insulation layer is made of different combinations of SiNx and HfO2 with overlapping structure.The simulation and experiment results show that the performance of transistors with high-k overlapping insulation layer structure is better than transistors with single SiNx layer.For SiNx/HfO2/SiNx structure, 40 nm-thickness HfO2 is more appropriate.For transistors with 3 or 5 insulation layers containing high-k materials, the symmetric structure with the same thickness for each layer is the best.The device structure parameters of TFT obtained by simulation can guide the actual production of TFT devices.关键词
半导体器件仿真/薄膜晶体管/绝缘层/氮化硅/二氧化铪/叠层结构Key words
semiconductor device simulation/thin film transistor/insulation layer/SiNx/HfO2/overlapping structure引用本文复制引用
李欣予,王若铮,吴胜利,李尊朝..绝缘层材料及结构对薄膜晶体管性能的影响[J].液晶与显示,2017,32(5):344-351,8.基金项目
国家自然科学基金项目(No.51271140 （）
No.61275023)Supported by National Natural Science Foundation of China(No.51271140 （）
No.61275023) （）
