液晶与显示2017，Vol.32Issue(5)：352-356,5.DOI:10.3788/YJYXS20173205.0352
垂直线不良分析与改善
Analysis and improvement of vertical line mura
张光明 1白金超 1曲泓铭 1张益存 1于凯1
作者信息
- 1. 北京京东方显示技术有限公司,北京 100176
- 折叠
摘要
Abstract
The vertical line mura which was caused by the via hole undercut between gate insulating layer and gate line has been researched.The effect of plasma enhanced chemical vapor deposition (PECVD), dry etch, sputter on via hole undercut was studied, and via hole morphology was characterized by scanning electron microscopy (SEM), the ratio of vertical line mura was tested by cell test equipment.The via hole undercut can be removed by changing via etch power, pressure, gas flow, and the vertical line was reduced from 1.4% to 0.7%.关键词
垂直线不良/倒角/过孔Key words
vertical line mura/undercut/via hole分类
信息技术与安全科学引用本文复制引用
张光明,白金超,曲泓铭,张益存,于凯..垂直线不良分析与改善[J].液晶与显示,2017,32(5):352-356,5.
