原子能科学技术2017，Vol.51Issue(5)：902-908,7.DOI:10.7538/yzk.2016.youxian.0428
铁电存储器激光微束单粒子效应试验研究
Laser Microbeam Experiment on Single Event Effect in Ferroelectric Random Access Memory
摘要
Abstract
The influence of operating frequency on single event upset (SEU) in ferro-electric random access memory (FRAM) was studied using the pulsed laser microbeam single event effect (SEE) facility.The experiment results show that the SEU cross section of FRAM increases notably with the decrease of operating frequency, and the SEU is caused by peripheral circuit.The cross section from 1 to 0 upset is larger than that from 0 to 1.The analysis of the function timing of FRAM and the SEU cross section under different duty cycles of chip enable (CE) signal indicates that the extension of CE active time due to reduced operating frequency has a direct relationship with the increase of SEU cross section.The experiment on single event latch-up (SEL) sensitivity of function block in FRAM was also studied and the SEL energy threshold and saturated SEL cross section were presented.Data upsets caused by SEL at both static and dynamic modes were discussed at the same time respectively.It's found that the test device is more susceptible to SEL-induced upsets at dynamic mode.关键词
铁电存储器/单粒子效应/激光微束/工作频率Key words
ferroelectric random access memory/single event effect/laser microbeam/operating frequency分类
信息技术与安全科学引用本文复制引用
魏佳男,郭红霞,张凤祁,罗尹虹,潘霄宇,丁李利,赵雯,刘玉辉..铁电存储器激光微束单粒子效应试验研究[J].原子能科学技术,2017,51(5):902-908,7.基金项目
国家自然科学基金资助项目(61634008) （61634008）
