原子能科学技术2017，Vol.51Issue(5)：909-915,7.DOI:10.7538/yzk.2017.51.05.0909
65 nm三阱CMOS静态随机存储器多位翻转实验研究
Experimental Research of Multiple Cell Upsets in 65 nm Triple-well CMOS Static Random Access Memory
摘要
Abstract
The irradiation tests were performed in a 65 nm triple-well CMOS static random access memory (SRAM) in normal incident angle by using four kinds of heavy ions with different linear energy transfer (LET) values.The single event upset (SEU) cross sections in upsets and in events and the main physical mechanisms of multiple cell upsets (MCUs) were investigated by combining MCUs pattern, position, and counts with the memory cell array layout.The results show that the SEU cross section in events is larger than the area of sensitive nodes in a memory cell while the SEU cross section in upsets is much larger than the area of a cell.The SEU cross section in upsets is larger than SEU cross section in events because of the significant increase in MCUs amount and order, and MCUs become the main source of SEU in SRAM.Moreover, considering of the vertical well isolation layout and the position of parasitic lateral bipolar transistors, most MCUs are induced by parasitic bipolar effect of PMOS and NMOS, of which the parasitic bipolar effect of NMOS is the main cause of MCUs.关键词
多位翻转/静态随机存储器/三阱/双极效应/重离子Key words
multiple cell upsets/static random access memory/triple-well/bipolar effect/heavy ion分类
信息技术与安全科学引用本文复制引用
李丽丽,郭刚,蔡莉,池雅庆,刘建成,史淑廷,惠宁,韩金华..65 nm三阱CMOS静态随机存储器多位翻转实验研究[J].原子能科学技术,2017,51(5):909-915,7.基金项目
国家自然科学基金资助项目(11475272) （11475272）
