重庆理工大学学报（自然科学版）2017，Vol.31Issue(5)：75-80,6.DOI:10.3969/j.issn.1674-8425(z).2017.05.013
利用AMPS对N型衬底上双面HIT太阳电池的模拟优化
Simulation Optimizing of Bifacial HIT Solar Cell on N-Type Substrate with AMPS
摘要
Abstract
The HIT solar cell of TCO/a-Si:H(p+)/a-Si:H(i)/c-Si(n)/a-Si:H(i)/a-Si:H(n+)/TCO was simulated with the software AMPS-1D.The variation laws of photovoltaic performance as functions of the thickness of the intrinsic layer,state density of interface defects, and the doping concentration of the window layer were analyzed.The simulation results show that intrinsic layer has both advantage of reducing the interface defects state density and disadvantage of causing the optical loss.Therefore, two factors should be fully considered to design the thickness of the intrinsic layer.The higher the doping concentration of the window layer, the higher the open-circuit voltage of solar cell, and the lower short-circuit current density.The reducing of short-circuit current density can be explained by the electric field distribution in the window layer.关键词
太阳电池/本征层厚度/掺杂浓度Key words
solar cell/thickness of the intrinsic layer/doping concentration分类
能源科技引用本文复制引用
张研研,王宇航,路钰清,王义正,王月..利用AMPS对N型衬底上双面HIT太阳电池的模拟优化[J].重庆理工大学学报（自然科学版）,2017,31(5):75-80,6.基金项目
辽宁省教育厅一般项目(LY2016002) （LY2016002）
渤海大学校博士启动项目(0515bs023) （0515bs023）
