电子科技大学学报2017，Vol.46Issue(3)：485-491,7.DOI:10.3969/j.issn.1001-0548.2017.03.002
微波场板GaN HEMTs大信号特性及其模型研究
Large-signal Characterization and Modeling for Microwave Field-Plate GaN HEMTs
摘要
Abstract
An electro-thermal large-signal model including a nonlinear thermal network for Gallium Nitride high electron mobility transistors (GaN HEMTs) with gate and source field plates is presented in this paper.This model including the nonlinear thermal network with respect to power dissipation is embedded in the improved Angelov model.Based on the electro-thermal principle,the thermal resistance and capacitance for the two field plates of the devices are identified by utilizing the electro-thermal finite element method (FEM) simulations.And the characteristics of small signal and load impedance for the two devices with different field plates have been analyzed in microwave frequency range.Accurate predictions of the quiescent currents,S-parameters up to 40 GHz,and large-signal harmonic performance for the devices with different gate peripheries have been achieved by the proposed model.关键词
场板/氮化镓/大信号模型/自热效应/热阻Key words
field plate/GaN/large-signal model/self-heating effect/thermal resistance分类
信息技术与安全科学引用本文复制引用
汪昌思,徐跃杭,闻彰,陈志凯,赵晓冬,徐锐敏..微波场板GaN HEMTs大信号特性及其模型研究[J].电子科技大学学报,2017,46(3):485-491,7.基金项目
国家自然科学基金(61474020) （61474020）
