强激光与粒子束2017，Vol.29Issue(8)：80-84,5.DOI:10.11884/HPLPB201729.170054
毫米波频段下MOSFET漏极电流噪声的统一模型
Unified noise model of MOSFET drain current for millimeter-wave applications
摘要
Abstract
Accurate high-frequency noise model of nanoscale MOSFET is essential for the low-power design of millimeter-wave integrated circuit.However, the existing high-frequency drain-current noise models do not consider the effect of device substrate and gate resistance, and the dependence of frequency and bias.To solve this problem, based on the physical characteristics of nanoscale MOSFET devices and considering the drift-diffusion equation and the effective gate overdrive, this paper proposes unified drain noise models to characterize the frequency and bias dependence from the strong reverse region to the weak region.The models are effective to the application to advanced design system(ADS) simulation design by predicting the dependency of frequency and bias accurately.The simulation results of the model are compared with the experimental results to verify the accuracy of the model.At the same time, this paper compares the practicability of the models for two different process devices of 130 nm and 40 nm MOSFETs, and verifies that the millimeter-wave noise characteristic of the 40 nm MOSFET is superior.关键词
MOSFET/漏极电流噪声/毫米波/弱反区/噪声模型Key words
MOSFET/drain current noise/millimeter-wave/weak inversion region/noise model分类
信息技术与安全科学引用本文复制引用
罗震,王军..毫米波频段下MOSFET漏极电流噪声的统一模型[J].强激光与粒子束,2017,29(8):80-84,5.基金项目
国家自然科学基金项目(69901003) （69901003）
四川省教育厅资助科研项目 （）
