液晶与显示2017，Vol.32Issue(6)：433-437,5.DOI:10.3788/YJYXS20173206.0433
TFT-LCD器件Al电极TFT特性研究
TFT character of Al electrode in TFT-LCD
张家祥 1刘琨 1李良杰 1李京鹏 1王彦强 1卢凯 1张文余 1王凤涛 1冀新友 1王亮 1张洁 1王琪1
作者信息
- 1. 北京京东方光电科技有限公司,北京 100176
- 折叠
摘要
Abstract
TFT character of the Mo/Al/Mo as TFT-LCD source/drain was studied.Compared with the single Mo, the channel interface was rougher and Ioff was larger.Through the optimization of the structure of membrane layer and the interface state, good TFT character and smooth channel interface were received.Increasing the thickness of bottom Mo could effectively reduce the penetration of Al, and prevent the formation of Al-Si compounds to get the smooth channel interface.SF6 treatment after N+ etching had no influence on properties, while Ion and Ioff were all reduced with increasing of the etching time.The treatment gas H2 before PVX deposition the same as N2+NH3 could reduce the channel defects.The plasma bombardment effect was enhanced and Al-Si compounds on the surface of the channel were reduced when the H2 processing time was increased, but the processing time was not too long to increase channel defect.Using the best condition of bottom Mo thickening, the N+ etch time increasing and the plasma treatment before PVX deposition, the good channel interface could be obtained and TFT character was as well as that of single Mo.关键词
沟道界面/漏电流/Al电极/TFT特性Key words
channel interface/Ioff/Al electrode/TFT character分类
信息技术与安全科学引用本文复制引用
张家祥,刘琨,李良杰,李京鹏,王彦强,卢凯,张文余,王凤涛,冀新友,王亮,张洁,王琪..TFT-LCD器件Al电极TFT特性研究[J].液晶与显示,2017,32(6):433-437,5.
