发光学报2017，Vol.38Issue(2)：165-169,5.DOI:10.3788/fgxb20173802.0165
大功率半导体激光器可靠性研究和失效分析
Reliability Test and Failure Analysis of High Power Semicounductor Laser
摘要
Abstract
The current step accelerated stress tests were carried out at 10,12,14 A for 975 nm high power semiconductor laser which is packaged with the way of COS.The test results were analyzed by using the inverse power law model and the exponential distribution theory.The average life of the device is 28 999 h under the current of 8 A.The high power semiconductor laser's failure and the change of temperature rise and the degree of polarization before and after aging were also studied.The results show that the main failure is internal degradation,deterioration of the cavity surface,and welding related degradation.The junction temperature of device after aging is higher,and the degree of polarization decreases about 10％.关键词
可靠性/步进加速应力/指数分布Key words
reliability/step accelerated stress/exponential distribution分类
信息技术与安全科学引用本文复制引用
王文知,井红旗,祁琼,王翠鸾,倪羽茜,刘素平,马骁宇..大功率半导体激光器可靠性研究和失效分析[J].发光学报,2017,38(2):165-169,5.基金项目
国家自然科学基金(61306057)资助项目 （61306057）
Supported by National Natural Science Foundation of China(61306057) （61306057）
