金刚石与磨料磨具工程2017，Vol.37Issue(1)：7-12,6.DOI:10.13394/j.cnki.jgszz.2017.1.0002
以新型硼源制备硼掺杂金刚石膜的性能研究
Properties of boron doped diamond films prepared by new type of boron source
摘要
Abstract
Diamond films with different boron concentrations are prepared by using microwave plasma chemical vapor deposition with ethanol-boron-oxide solution as boron source.SEM,XRD,Raman spectroscopy and electrochemical work station were used to observe and study the surface morphology,crystal structure and electro-chemical properties of the film.Results show that with the increase of boron concentration,crystalline size of diamond film first decreases and then increases,while the potential window decreases from 3.1 V to 2.6 V and the anodic current decreases from 0.022 7 mA · cm-2 to 0.011 9 mA · cm-2.But such increase has almost no influence on background current and electro-chemical reversibility.关键词
硼掺杂/金刚石膜/电化学性能Key words
boron doping/diamond film/electrochemical properties分类
化学化工引用本文复制引用
王梁,江彩义,郭胜惠,高冀芸,胡途,杨黎,彭金辉,张利波..以新型硼源制备硼掺杂金刚石膜的性能研究[J].金刚石与磨料磨具工程,2017,37(1):7-12,6.基金项目
国家自然科学基金(No.51604134) （No.51604134）
国家科技计划对俄科技合作专项(No.2015DFR50620) （No.2015DFR50620）
云南省教育厅科学研究项目(No.2016ZZX040) （No.2016ZZX040）
昆明市科技计划项目(No.2014-04-A-H-02-3085). （No.2014-04-A-H-02-3085）
