金刚石与磨料磨具工程2017，Vol.37Issue(1)：29-33,5.DOI:10.13394/j.cnki.jgszz.2017.1.0006
低残余应力HFCVD硼掺杂金刚石薄膜的制备与图形化研究
Investigation on deposition and patterning of low residual stress HFCVD boron-doped diamond film
摘要
Abstract
Raman spectroscopy was applied to analyze the residual stress of boron-doped diamond film on silicon wafer by different growth pressures and different carbon source concentrations.Photolithography and etching technique were used to fabricate diamond micro-structures.Results show that the residual stress in the diamond films generally tends to be compressive stress.It is also found that the residual stress in the diamond film could significantly be reduced by optimizing the growth pressure and that it changes from compressive stress to tensile stress while the growth pressure is increased from 1.3 kPa to 6.5 kPa.The carbon source concentration has small effect on residual stress but big influence on the diamond film quality.In the end,cantilever,angle accelerometer,acoustic diaphragm were fabricated from the low residual diamond film by photolithography and etching.关键词
生长气压/碳源浓度/残余应力/图形化悬臂梁Key words
growth pressure/carbon source concentration/residual stress/patterning cantilever分类
化学化工引用本文复制引用
赵天奇,王新昶,孙方宏..低残余应力HFCVD硼掺杂金刚石薄膜的制备与图形化研究[J].金刚石与磨料磨具工程,2017,37(1):29-33,5.基金项目
国家自然科学基金(No.51275302) （No.51275302）
中国博士后科学基金(No.15Z102060056,No.2016T90370). （No.15Z102060056,No.2016T90370）
