空间电子技术2017，Vol.14Issue(1)：71-74,84,5.DOI:10.3969/j.issn.1674-7135.2017.01.016
65nm体硅CMOS工艺抗辐射触发器单元单粒子翻转效应研究
Single Event Upset in 65 nm Bulk CMOSRadiation-hardened Flip-flop
蒋轶虎 1李海松 1杨博 1岳红菊 1周凤1
作者信息
- 1. 西安微电子技术研究所,西安 710065
- 折叠
摘要
Abstract
A DICE flip-flop with muller-C elememt output is presented.To verify the effect of this hardening-by-design techniques,test chip and software/hardware system for single event effect(SEU) experiment were designed.An experiment based on Beijing HI-13 tandem accelerator SEE irradiation facility has been carried with six different particles,including Cl,Ti,Cu,Br,I and Au.The SEU rate prediction on GEO orbit show that DICE flip-flops has much smaller cross-section(2.37×10-10 upsets/bit/day) than normal D flip-flops' cross-section(2.15×10-8 upsets/bit/day).关键词
DICE触发器/单粒子翻转/验证电路/辐照试验Key words
DICE flip-flop/Single event upset/Test chip/Radiation-test分类
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蒋轶虎,李海松,杨博,岳红菊,周凤..65nm体硅CMOS工艺抗辐射触发器单元单粒子翻转效应研究[J].空间电子技术,2017,14(1):71-74,84,5.
