原子能科学技术2017，Vol.51Issue(3)：549-554,6.DOI:10.7538/yzk.2017.51.03.0549
不同偏置影响SiGe HBT剂量率效应数值模拟
Numerical Simulation of Bias Effect on Dose Rate Effect of SiGe Heterojunction Bipolar Transistor
摘要
Abstract
Dose rate effects of SiGe heterojunction bipolar transistor (HBT ) with differ-ent biases were studied .A three-dimensional numerical simulation model of SiGe HBT was established with Sentaurus TCAD software ,and the changes of Gummel character-istics and transient current peaks of each terminal with time at different dose rates were simulated .The results show that transient current peaks of each terminal increase with dose rate .The worst biases for dose rate effect were different for different terminals . For the same terminal ,the transient current peak is different ,the transient current of collector is large under substrate reverse bias , the transient current of base is large under cut-off bias and transient current of substrate is large under substrate reverse bias .T he main reason for the phenomena is that different biases affect the change of carrier transport mode and the applied electric field .关键词
SiGeHBT/不同偏置/γ辐射/数值模拟Key words
SiGe heterojunction bipolar transistor/different biases/γradiation/numer-ical simulation分类
信息技术与安全科学引用本文复制引用
马婷,张晋新,贺朝会,唐杜,李培..不同偏置影响SiGe HBT剂量率效应数值模拟[J].原子能科学技术,2017,51(3):549-554,6.基金项目
国家自然科学基金资助项目(11575138 ,61274106 ,61574171) （11575138 ,61274106 ,61574171）
