真空电子技术Issue(1):28-30,3.
弹载速调管存储寿命技术研究
Research on Storage Life of Missile-Borne Klystrons
周军 1欧阳佳佳 1王坤 1杨继涛1
作者信息
- 1. 北京真空电子技术研究所,北京100015
- 折叠
摘要
Abstract
This paper describes the research on long storage life of missile-borne klystrons.Through theoretical analysis and experimental verification,the failure cause of the klystron storage was identified.Some technical improvements were carried out and the measures were verified effective.A new method for measuring the vacuum degree of the missile borne klystron was presented.Based on the measuring method,storage and screen schemes of missile-borne klystrons are worked out.It is finally verified that the storage life of klystrons can reach 12 years by these schemes.关键词
速调管/真空度/存储Key words
Klystron/Vacuum degree/Storage分类
信息技术与安全科学引用本文复制引用
周军,欧阳佳佳,王坤,杨继涛..弹载速调管存储寿命技术研究[J].真空电子技术,2017,(1):28-30,3.