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The effects of deep-level defects on the electrical properties of Cd0.9Zn0.1Te crystals

Pengfei Wang Ruihua Nan Zengyun Jian

半导体学报（英文版）2017，Vol.38Issue(6)：8-13,6.

半导体学报（英文版）2017，Vol.38Issue(6)：8-13,6.DOI:10.1088/1674-4926/38/6/062002

The effects of deep-level defects on the electrical properties of Cd0.9Zn0.1Te crystals

Pengfei Wang ¹Ruihua Nan ¹Zengyun Jian¹

作者信息

1. School of Materials and Chemical Engineering, Xi'an Technological University, Xi'an 710021, China
折叠

摘要

关键词

Cd0.9Zn0.1Te/deep-level defects/thermally stimulated current spectroscopy/Fermi-level/electrical properties

Key words

Cd0.9Zn0.1Te/deep-level defects/thermally stimulated current spectroscopy/Fermi-level/electrical properties

引用本文复制引用

Pengfei Wang,Ruihua Nan,Zengyun Jian..The effects of deep-level defects on the electrical properties of Cd0.9Zn0.1Te crystals[J].半导体学报（英文版）,2017,38(6):8-13,6.

基金项目

Project supported by the National Natural Science Foundation of China (No.51502234) and the Scientific Research Plan Projects of Shaanxi Provincial Department of Education of China (No.15JS040). （No.51502234）

半导体学报（英文版）

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ISSN：1674-4926

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