半导体学报（英文版）2017，Vol.38Issue(6)：18-23,6.DOI:10.1088/1674-4926/38/6/063001
Effect of SnCl2 and SnCl4 precursors on SnSx thin films prepared by ultrasonic spray pyrolysis
Effect of SnCl2 and SnCl4 precursors on SnSx thin films prepared by ultrasonic spray pyrolysis
Z.Hadef 1K.Kamli 1A.Attaf 2M.S.Aida 3B.Chouial1
作者信息
- 1. Laboratoire des Semi-Conducteurs, Faculté des Sciences, Université Badji Mokhtar, Annaba, Algeria
- 2. Laboratoire de physique des couches minces et applications LPCMA, Université de Biskra, Algeria
- 3. Laboratoire de Couches Minces et Interfaces, Faculté des Sciences, Université de Constantine, Algeria
- 折叠
摘要
关键词
precursors/ultrasonic spray/tin sulfide semiconductor/thin films characterizationKey words
precursors/ultrasonic spray/tin sulfide semiconductor/thin films characterization引用本文复制引用
Z.Hadef,K.Kamli,A.Attaf,M.S.Aida,B.Chouial..Effect of SnCl2 and SnCl4 precursors on SnSx thin films prepared by ultrasonic spray pyrolysis[J].半导体学报（英文版）,2017,38(6):18-23,6.
