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Comparative research on the influence of varied Al component on the active layer of AlGaN photocathode

Minyou He Liang Chen Lingai Su Lin Yin Yunsheng Qian

半导体学报（英文版）2017，Vol.38Issue(6)：38-43,6.

半导体学报（英文版）2017，Vol.38Issue(6)：38-43,6.DOI:10.1088/1674-4926/38/6/063004

Comparative research on the influence of varied Al component on the active layer of AlGaN photocathode

Minyou He ¹Liang Chen ¹Lingai Su ²Lin Yin ¹Yunsheng Qian¹

作者信息

1. Institute of Optoelectronics Technology, China Jiliang University, Hangzhou 310018, China
2. Institute of Electronics Engineering & Optoelectronics Technology, Nanjing University of Science and Technology,Nanjing 210094, China
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摘要

关键词

first-principles/electronic structure/absorption coefficient/spectral response/quantum efficiency/fitting parameter

Key words

first-principles/electronic structure/absorption coefficient/spectral response/quantum efficiency/fitting parameter

引用本文复制引用

Minyou He,Liang Chen,Lingai Su,Lin Yin,Yunsheng Qian..Comparative research on the influence of varied Al component on the active layer of AlGaN photocathode[J].半导体学报（英文版）,2017,38(6):38-43,6.

基金项目

Project supported by the National Natural Science Foundation of China (Nos.61308089,6144005) and the Public Technology Applied Research Project of Zhejiang Province (No.2013C31068). （Nos.61308089,6144005）

半导体学报（英文版）

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ISSN：1674-4926

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