电工技术学报2017，Vol.32Issue(12)：58-69,12.
SiC MOSFET与SiC SBD换流单元瞬态模型
Analytical Transient Model of Commutation Units with SiC MOSFET and SiC SBD Pair
摘要
Abstract
Compared with Si devices, the higher switching speed capability and lower on-state resistance of Silicon Carbide (SiC) devices increase the non-ideality and sensitivity to parasitic parameters of their switching transients. Thus, more accurate analytical transient modeling is required. In this paper, switching transients of power switching devices are simplified by time slicing, mechanism decoupling and nonlinear parameter decoupling, in order to highlight switching characteristics of switching transients while simplifying the analysis of their physical mechanisms. An analytical transient model of a commutation unit with SiC MOSFET and SiC SBD pair is proposed. Analytical calculation and experiment waveforms are compared. The results show that the proposed model is able to provide a relatively accurate prediction of switching transient waveforms and switching losses of SiC MOSFET. All the parameters in the proposed model can be extracted from datasheets, which enhances its feasibility.关键词
SiC功率器件/瞬态模型/开关特性/开关损耗Key words
SiC power devices/transient model/switching characteristics/switching losses分类
信息技术与安全科学引用本文复制引用
朱义诚,赵争鸣,王旭东,施博辰..SiC MOSFET与SiC SBD换流单元瞬态模型[J].电工技术学报,2017,32(12):58-69,12.基金项目
国家自然科学基金重大项目资助(51490680、51490683). （51490680、51490683）
