电工技术学报2017，Vol.32Issue(12)：70-78,9.
基于关断电流最大变化率的压接式IGBT模块结温提取方法
Junction Temperature Extraction with Maximum Collector Current Falling Rate during Turn-Off for Press-Pack IGBT Modules
摘要
Abstract
Press-pack insulated gate bipolar transistor (IGBT) modules are characterized by advanced electric property and package design, which draws much attention from high power application such as voltage-source-converter based high-voltage-direct-current (VSC-HVDC) transmission. The reliability of IGBT modules becomes the research focus for power devices in high power application and junction temperature monitoring is closely relative to reliability analysis. Based on press-pack IGBT double-pulse test platform, this paper introduced a junction temperature extraction method with maximum collector current falling rate (diC/dt)max. And the inherent monotonic relationship between IGBT chip temperature and maximum collector current falling rate was explored. Considering the package features of press-pack IGBT modules, the intrinsic parasitic inductance within module was utilized to obtain maximum collector current falling rate and the temperature characteristics was deduced as well. Finally the experimental verification was performed by the press-pack IGBT double-pulse test platform to confirm the feasibility of proposed junction temperature extraction method with maximum collector current falling rate.关键词
压接式IGBT/可靠性/关断电流最大变化率/结温提取Key words
Press-pack insulated gate bipolar transistor/reliability/maximum collector current falling rate/junction temperature extraction分类
信息技术与安全科学引用本文复制引用
常垚,陈玉香,李武华,李威辰,何湘宁..基于关断电流最大变化率的压接式IGBT模块结温提取方法[J].电工技术学报,2017,32(12):70-78,9.基金项目
国家自然科学基金资助项目(51490682). （51490682）
