电子学报2017，Vol.45Issue(5)：1090-1095,6.DOI:10.3969/j.issn.0372-2112.2017.05.010
基于CNFET的高性能三值SRAM-PUF电路设计
High Performance Ternary SRAM-PUF Circuit Based on CNFET
摘要
Abstract
By researching the Carbon Nanotube Field Effect Transistor(CNFET) and the Physical Unclonable Functions(PUF) circuit,a structure of high-performance ternary SRAM-PUF circuit is proposed.In this circuit structure,the cross-coupling ternary inverters generate random current,which is analyzed according to the mismatch feature.After competing the random current of ternary SRAM,it produces three-valued signal,such as "0","1" and "2".Under Stanford University 32nm CNFET standard model,HSPICE is used for Monte Carlo simulation to analysis the randomness,uniqueness and other features.And simulation results show that the randomness variation and uniqueness can be achieved at 0.03% after normalization.Comparing with conventional binary CMOS PUF circuit,the proposed circuit improves the speed by 33%,and increases the number of challenge-response by(1.5)n times.关键词
碳纳米管场效应晶体管/三值逻辑/SRAM-PUF/随机性/唯一性Key words
carbon nanotube field effect transistor(CNFET)/three-valued logic/SRAM-PUF/randomness/uniqueness分类
信息技术与安全科学引用本文复制引用
汪鹏君,龚道辉,张会红,康耀鹏..基于CNFET的高性能三值SRAM-PUF电路设计[J].电子学报,2017,45(5):1090-1095,6.基金项目
国家自然科学基金(No.61474068, No.61234002) （No.61474068, No.61234002）
浙江省公益性技术应用研究计划项目(No.2016C31078) （No.2016C31078）
浙江省自然科学基金(No.LQ14F040001) （No.LQ14F040001）
宁波市自然科学基金(No.2015A610107) （No.2015A610107）
