人工晶体学报2017，Vol.46Issue(5)：759-765,7.
影响化学机械抛光4H导电SiC晶片表面质量的关键参数研究
Key Parameters of Chemical Mechanical Polishing for Obtaining Defect Free 4H-type Conductive SiC Substrate Surface
摘要
Abstract
Colloidal silica slurry was used for chemical mechanical polishing (CMP) 4H-type conductive SiC surface to explore the key parameters affecting the surface quality of SiC substrates and obtain higher material removal rate and defect-free surface.The results indicate that SiC surface interact with both hydrogen peroxide (H2O2) and hydroxyl ion (OH-) to form softer oxidations.The removal rate of SiC increase firstly and then remain unchange when the content of H2O2 or OH-is increase under a certain pressure.The removal rate of SiC increase further when the content of OH-is increase under a higher pressure.By optimizing the polishing parameters, the polishing removal rate of SiC is increased to 142 nm/h.The results show that keeping the balance of chemical and mechanical influence is a key factor to obtain the high removal rate and defect free SiC surface.The results of optical surface analyzer (Candela) and atomic force microscope(AFM) show that the wafer surface has no scratch and the surface roughness is 0.06 nm.The densities of defects are less than 1 /cm2 and the surface roughness is 0.16 nm after epitaxial growing a film of SiC.关键词
碳化硅/化学机械抛光/pH值/压力/双氧水Key words
silicon carbide/chemical mechanical polishing/pH value/pressure/H2O2分类
信息技术与安全科学引用本文复制引用
郭钰,彭同华,刘春俊,袁文霞,蔡振立,张贺,王波..影响化学机械抛光4H导电SiC晶片表面质量的关键参数研究[J].人工晶体学报,2017,46(5):759-765,7.基金项目
国家科技部高技术研究发展计划"863计划"(2014AA041402) （2014AA041402）
北京市科技新星计划项目(Z141103001814088) （Z141103001814088）
新疆兵团重点领域创新团队计划 （）
