无机材料学报2017，Vol.32Issue(6)：621-624,4.DOI:10.15541/jim20160446
In:Ga2O3氧化物半导体晶体的生长与性能研究
Growth and Property of In:Ga2O3 Oxide Semiconductor Single Crystal
摘要
Abstract
β-Ga2O3 crystal is a novel oxide semiconductor with wide bandgap, but its intrinsic conductive capabil-ity is poor. Ion doping is an effective way to regulate conductivity, transparency and crystallinity of the crystal. Transparent blue In:Ga2O3 single crystal with the dimension ofφ8 mm×50 mm was grown by optical floating zone method. The as-grown crystal is of good crystallization quality. After doping In3+ ion,β-Ga2O3crystal has strong in-frared absorption, and its thermal conductivity slightly decreases. At room temperature, the electrical conductivity and carrier concentration of as-grown In:Ga2O3 crystal are 4.94×10-4 S/cm and 1.005×1016 cm-3, respectively, which are approximately one order magnitude higher than that of undopedβ-Ga2O3 crystal. The electrical property of In:Ga2O3 crystal is sensitive to heat treatment. After annealing at 1200℃ in air or in argon, its electrical conductiv-ity decreases. These experimental results suggest that In3+ ion doping can improve the electrical property ofβ-Ga2O3 single crystal.关键词
In:Ga2O3晶体/浮区法/电导率Key words
In:Ga2O3 single crystal/optical floating zone method/electrical conductivity分类
数理科学引用本文复制引用
唐慧丽,吴庆辉,罗平,王庆国,徐军..In:Ga2O3氧化物半导体晶体的生长与性能研究[J].无机材料学报,2017,32(6):621-624,4.基金项目
国家自然科学基金(91333106) （91333106）
上海科委科技攻关项目(13521102700) （13521102700）
上海蓝宝石晶体工程技术研究中心(筹)(14DZ2252500) （筹）
中央高校基本科研业务费专项资金(2015KJ040, 1370219229) National Natural Science Foundation of China (91333106) （2015KJ040, 1370219229）
Science and Technology Commission of Shanghai Mu-nicipality (13521102700) （13521102700）
Science and Technology Commission of Shanghai Municipality (14DZ2252500) （14DZ2252500）
Fundamental Research Funds for the Central Universities (2015KJ040, 1370219229) （2015KJ040, 1370219229）
