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Resistive random access memory and its applications in storage and nonvolatile logic

Dongbin Zhu Yi Li Wensheng Shen Zheng Zhou Lifeng Liu Xing Zhang

半导体学报（英文版）2017，Vol.38Issue(7)：18-30,13.

半导体学报（英文版）2017，Vol.38Issue(7)：18-30,13.DOI:10.1088/1674-4926/38/7/071002

Resistive random access memory and its applications in storage and nonvolatile logic

Dongbin Zhu ¹Yi Li ¹Wensheng Shen ¹Zheng Zhou ¹Lifeng Liu ¹Xing Zhang¹

作者信息

1. Institute of Microelectronics,Peking University,Beijing 100871,China
折叠

摘要

关键词

RRAM/memory/nonvolatile logic/metal-oxide/resistive switching

Key words

RRAM/memory/nonvolatile logic/metal-oxide/resistive switching

引用本文复制引用

Dongbin Zhu,Yi Li,Wensheng Shen,Zheng Zhou,Lifeng Liu,Xing Zhang..Resistive random access memory and its applications in storage and nonvolatile logic[J].半导体学报（英文版）,2017,38(7):18-30,13.

基金项目

Project supported in part by the National Natural Science Foundation of China (Nos.61421005,61376084) and the National Science and Technology Major Project of China (No.2011ZX02708). （Nos.61421005,61376084）

半导体学报（英文版）

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ISSN：1674-4926

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