首页|期刊导航|半导体学报（英文版）|Temperature characteristics research of SOI pressure sensor based on asymmetric base region transistor
半导体学报（英文版）2017，Vol.38Issue(7)：89-92,4.DOI:10.1088/1674-4926/38/7/074008
Temperature characteristics research of SOI pressure sensor based on asymmetric base region transistor
Temperature characteristics research of SOI pressure sensor based on asymmetric base region transistor
摘要
关键词
SOI pressure sensor/asymmetric base region transistor/temperature compensation/temperature coefficient of the sensitivity/MEMS technologyKey words
SOI pressure sensor/asymmetric base region transistor/temperature compensation/temperature coefficient of the sensitivity/MEMS technology引用本文复制引用
Xiaofeng Zhao,Dandan Li,Yang Yu,Dianzhong Wen..Temperature characteristics research of SOI pressure sensor based on asymmetric base region transistor[J].半导体学报（英文版）,2017,38(7):89-92,4.基金项目
Project supported by the National Natural Science Foundation of China (No.61471159),the Natural Science Foundation of Heilongjiang Province (No.F201433),the University Nursing Program for Young Scholars with Creative Talents in Heilongjiang Province (No.2015018),and the Special Funds for Science and Technology Innovation Talents of Harbin in China (No.2016RAXXJ016). （No.61471159）
