材料科学与工程学报2017，Vol.35Issue(3)：352-357,6.DOI:10.14136/j.cnki.issn1673-2812.2017.03.002
探究GSMBE制备GaAsBi薄膜中生长条件对Bi浓度的影响
Influence of Growth Conditions on Bi Concentration in GaAsBi Thin Films Grown by GSMBE
摘要
Abstract
To explore the influence of growth conditions on Bi concentration,GaAsBi multilayer structured samples were grown on semi-insulating GaAs (100) substrates using gas source molecular beam epitaxy (GSMBE).GSMBE growth parameters in terms of growth temperature,AsH3 pressure and Bi cell temperature were varied for each GaAsBi layer.Through secondary ion mass spectrometry and energy dispersive X-ray spectrum in transmission electron microscope,it is shown that Bi concentration decreases with increasing growth temperature.Under low growth rate,Bi concentration descends quickly with severe surface segregation and regasification.When As2:Ga flux ratio is between 0.5 to 0.8,Bi concentration changes linearly with AsH3 pressure,which is less sensitive than GaAsBi grown by solid source MBE.In addition,increasing Bi cell temperature enhances Bi incorporation reaching a saturation value at high growth temperatures.关键词
GaAsBi/气态源分子束外延/生长温度/AsH3压/Bi源温度Key words
GaAsBi/GSMBE/growth temperature/AsH3 pressure/Bi cell temperature分类
信息技术与安全科学引用本文复制引用
崔健,潘文武,吴晓燕,陈其苗,刘娟娟,张振普,王庶民..探究GSMBE制备GaAsBi薄膜中生长条件对Bi浓度的影响[J].材料科学与工程学报,2017,35(3):352-357,6.基金项目
国家重点基础研究发展计划资助项目(2014CB643902),国家自然科学基金关键资助项目(61334004) （2014CB643902）
