材料科学与工程学报2017，Vol.35Issue(3)：363-367,384,6.DOI:10.14136/j.cnki.issn1673-2812.2017.03.004
射频输入功率对DLC∶F∶Si薄膜结构和附着特性的调制机理
Modulation Mechanism of RF Input Power on Structure and Adhesion Characteristics of DLC∶F∶Si Thin Films
摘要
Abstract
DLC films with F and Si co-doping (DLC∶ F∶ Si films) were deposited on 316L stainless steel substrates at different input powers,with radio reactive magnetron sputtering by using trifluromethane (CHF3) and argon as source gases and SiC crystal target.The effects of RF input power on the adhesion,hardness and surface contact angle of the films were studied.Results show that DLC∶ F∶ Si thin films with adhesive force of 11 N Newton can be prepared at an input power of about 180W.By means of Raman and infrared spectrum measurements and sample roughness analysis,the authors put forward the mechanism of the input power modulating the structure and characteristics of DLC∶ F∶ Si thin films.From the mechanism study,how the RF input power directly affects the sputtering yield of SiC target,the energy of space Ar+ and the decomposition degree of CHF3.Also involved are the affection by the RF input power of the energy and concentration of space Si,C,-CF,-CF2,especially F* radicals.Therefore,the modulation of Si-C content,correlation degree of C network and F content of the films are recognized.The increase of C=C and Si-C bonds is helpful to improve the adhesion of the DLC∶F∶Si films,while the decline of F content would lead to the decrease of the hydrophobic property of the films.关键词
lDLC∶F∶Si薄膜/射频反应磁控溅射/附着力/共掺杂Key words
DLC∶F∶Si films/radio frequency reactive magnetron sputtering/adhesion/co-doping分类
数理科学引用本文复制引用
吴伟,朱志鹏,张剑东,闵嘉炜,江美福,钱侬..射频输入功率对DLC∶F∶Si薄膜结构和附着特性的调制机理[J].材料科学与工程学报,2017,35(3):363-367,384,6.基金项目
国家自然基金资助项目(11275136) （11275136）
