材料科学与工程学报2017，Vol.35Issue(3)：432-437,422,7.DOI:10.14136/j.cnki.issn1673-2812.2017.03.017
应变补偿1eV吸收带边GaInAsN/GaAs超晶格太阳能电池格层设计
Design of Solar Cell Grid of Strain Compensated GaInAsN/GaAs Superlattice with 1eV Absorption Band Edge
摘要
Abstract
Band structures of GaInAsN/GaAs superlattice systems were theoretically investigated by using Kronig-Penney model,which is commonly used in supperlattice eletron states,and using the deformation potential theory as well.The results of these calculations show the general rules of band structures varied with each sub-layer parameter,energy dispersion relationships of superlattice as well as effects caused by strain.Besides,band gaps of systems in different sub-layers are also revealed.Moreover,corresponding relationships with respect to related parameters and strain conditions of GaInAsN/GaAs superlattices with 1eV absorption band edge,under certain choices of different groups of well layered materials of superlattices,were calculated.The results indicate that active region thicker and with higher quality of GaInNAs/GaAs superlattice is more favorable in well layered materials with rich In and poor N of GaInNAs materials.Meanwhile,better strain compersation is also acquired.In addition,we further simulated the internal quantum efficiency of supperlattice solar cell and analyzed the feasibility of GaInAsN/GaAs superlattices with 1eV absorption band edge to improve the whole photoelectric conversion efficiency.关键词
Kronig-Penney模型/GaInAsN/GaAs超晶格/应变补偿/应变/太阳能电池Key words
Kronig-Penney model/GaInAsN/GaAs superlattice/strain compensation/strain/solar cell分类
信息技术与安全科学引用本文复制引用
何右青,唐吉玉,潘保瑞..应变补偿1eV吸收带边GaInAsN/GaAs超晶格太阳能电池格层设计[J].材料科学与工程学报,2017,35(3):432-437,422,7.基金项目
国家自然科学基金资助项目(61271127) （61271127）
