电工技术学报2017，Vol.32Issue(13)：1-13,13.DOI:10.19595/j.cnki.1000-6753.tces.160954
适用于器件级到系统级热仿真的IGBT传热模型
IGBT Thermal Model for Thermal Simulation of Device to System
摘要
Abstract
Based on the device to system grade and multi-timescale characteristics of thermal network, a method of thermal modelling is proposed. The thermal network model of insulated gate bipolar transistor (IGBT) is established based on the network structure of RC and thermal theory. The operation rules of junction temperature, simplified standard and method of single-layer and multi-layer network structure is found out. On this basis, taking the different requirements of device to system for thermal model as the main line and the different timescale of each package layer time constant as the breakthrough point, the IGBT thermal models for device to system thermal simulation are established. The results of simulations and experiments verify the rightness and accuracy of the established models. It is significant in theory and practical application for finding out the characteristics of thermal network structure and the operation rules of junction temperature and realizing the independent and joint simulation of power electronic device to system.关键词
传热网络模型/结温运行规律/器件到系统/模型精度/模型效率Key words
Thermal network model/operation rules of junction temperature/device to system/model accuracy/model efficiency分类
信息技术与安全科学引用本文复制引用
刘宾礼,罗毅飞,肖飞,汪波..适用于器件级到系统级热仿真的IGBT传热模型[J].电工技术学报,2017,32(13):1-13,13.基金项目
国家自然科学基金重点项目(51490681),国家重点基础研究发展计划(973计划)(2015CB251004)和国家自然科学基金青年项目(51507185)资助. （51490681）
